Patterned Indium Doped Tin Oxide ITO iav 10ohm

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  • FOB Nqe:US $0.5 - 9,999 / Daim
  • Min. Order Quantity:100 Daim / Daim
  • Muaj peev xwm muab khoom:10000 Daim / Daim ib hlis
  • Chaw nres nkoj:Shenzhen
  • Cov nqe lus them nqi:L / C, D / A, D / P, T / T

  • Product Detail

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    Khoom cim npe

    oem 10 xyoo kev

    ITO Qauv iav (2)-400 ITO Qauv iav (3)-400

    Patterned Indium Doped Tin Oxide ITO iav 10ohm

    Khoom Paub meej:

    1. Loj: 300x200mm / Thickness: 2 ± 0.2mm Resistance / sq: 20ohms

    2. Conductive Indium Doped Tin Oxide ITO iav

    3. Ua haujlwm kub: mus txog 300 degrees centigrade (Yog tias ua haujlwm kub yuav tsum txog 600 degree, FTO kuj muaj)

    4. Kev kho qhov chaw muaj ntxiv: Anti-reflective txheej

    5. Daim ntawv thov: hnub ci hlwb, kev sim tshuaj lom neeg, kev sim electrochemical (electrode), lub tsev kawm ntawv qib siab loj, EMI iav thiab lwm qhov chaw siv tshuab tshiab

    Patterned ITO iav txheej txheem txwv yog:

    1. Qhov siab tshaj plaws qauv cheeb tsam 350 x 350 mm

    2. Yam tsawg kawg feature dimension 0.05 mm

    3. Qhov sib nrug tsawg kawg yog 0.05 hli

    4. Qhov chaw raug+/- 0.02 hli

    ITO yog dab tsiConductive iav?   

    1. ITO conductive iav yog tsim los ntawm depositing silicon dioxide (SiO2) thiab indium tin oxide (feem ntau hu ua ITO) nyias zaj duab xis nyob rau hauv lub hauv paus ntawm soda-lime los yog borosilicate iav los ntawm kev siv ib tug magnetron ntsuas txoj kev.

    2. ITO yog cov khoom siv hlau nrog cov pob tshab zoo thiab cov khoom siv hluav taws xob. Nws muaj cov yam ntxwv ntawm txwv tsis pub bandwidth, siab lub teeb transmittance thiab tsis tshua muaj zog nyob rau hauv cheeb tsam pom spectrum. Nws yog dav siv nyob rau hauv affirmative zaub pab kiag li lawm, solar cells, thiab tshwj xeeb functional qhov rais txheej. Cov cuab yeej kuaj thiab lwm yam khoom siv optoelectronic.
     
    FTO yog dab tsiConductive iav?  

    1. FTO conductive iav yog fluorine-doped SnO2 pob tshab conductive iav (SnO2: F), hu ua FTO.

    2. SnO2 yog ib tug dav band-gap oxide semiconductor uas yog pob tshab rau pom lub teeb, nrog ib tug band sib txawv ntawm 3.7-4.0eV, thiab muaj ib tug tsis tu ncua tetrahedral kub liab qauv. Tom qab tau doped nrog fluorine, SnO2 zaj duab xis muaj qhov zoo ntawm lub teeb pom kev zoo rau pom lub teeb, loj ultraviolet absorption coefficient, tsis tshua muaj zog, ruaj khov, thiab muaj zog tiv taus acid thiab alkali ntawm chav tsev kub.

     ITO
    ITO txheej txheej txheem
    txheej txheem txheej txheej (1) txheej txheem txheej txheej (2)
    txheej txheem txheej txheej (5) txheej txheem txheej txheej (3)
    Cov neeg siv khoom tuaj xyuas & tawm tswv yim

    Tawm tswv yim

    Txhua yam khoom siv yog ROHS III (EUROPEAN VERSION), ROHS II (CHINA VERSION), REACH (Tam sim no VERSION)


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