Patterned Indium Doped Tin Oxide ITO iav 10ohm
Khoom Paub meej:
1. Loj: 300x200mm / Thickness: 2 ± 0.2mm Resistance / sq: 20ohms
2. Conductive Indium Doped Tin Oxide ITO iav
3. Ua haujlwm kub: mus txog 300 degrees centigrade (Yog tias ua haujlwm kub yuav tsum txog 600 degree, FTO kuj muaj)
4. Kev kho qhov chaw muaj ntxiv: Anti-reflective txheej
5. Daim ntawv thov: hnub ci hlwb, kev sim tshuaj lom neeg, kev sim electrochemical (electrode), lub tsev kawm ntawv qib siab loj, EMI iav thiab lwm qhov chaw siv tshuab tshiab
1. Qhov siab tshaj plaws qauv cheeb tsam 350 x 350 mm
2. Yam tsawg kawg feature dimension 0.05 mm
3. Qhov sib nrug tsawg kawg yog 0.05 hli
4. Qhov chaw raug+/- 0.02 hli
1. ITO conductive iav yog tsim los ntawm depositing silicon dioxide (SiO2) thiab indium tin oxide (feem ntau hu ua ITO) nyias zaj duab xis nyob rau hauv lub hauv paus ntawm soda-lime los yog borosilicate iav los ntawm kev siv ib tug magnetron ntsuas txoj kev.
1. FTO conductive iav yog fluorine-doped SnO2 pob tshab conductive iav (SnO2: F), hu ua FTO.
2. SnO2 yog ib tug dav band-gap oxide semiconductor uas yog pob tshab rau pom lub teeb, nrog ib tug band sib txawv ntawm 3.7-4.0eV, thiab muaj ib tug tsis tu ncua tetrahedral kub liab qauv. Tom qab tau doped nrog fluorine, SnO2 zaj duab xis muaj qhov zoo ntawm lub teeb pom kev zoo rau pom lub teeb, loj ultraviolet absorption coefficient, tsis tshua muaj zog, ruaj khov, thiab muaj zog tiv taus acid thiab alkali ntawm chav tsev kub.
Txhua yam khoom siv yog ROHS III (EUROPEAN VERSION), ROHS II (CHINA VERSION), REACH (Tam sim no VERSION)
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