
Fale gaosi oloa 1.1mm Indium Tin Oxide Courted Greente ma le masani ai mamanu & maualalo tetee mo Lab Supting
O le faʻaeletonika tulaga / maualuga le saʻo / sili le mafolafola o loʻo i ai ma mulitiple gaioiga
1. O le Indium ni indium tin oxide tioata i le maualalo o le tino ma maualuga felauaiga. Galue Malosi I lalo ifo o le 300 ℃.
2. Prameter pepa teteʻe: 82% -Conductive systeer mafiafia: 1000 ± 200 (lanumoana-samasama-samasama-samasama
3. CNC Clooting CNC Ausia maualuga le maualuga o le mafai ona puleaina le sao.
4. Taʻialaina o le tomai ma afifi le tele-fua o le tele o le faia o le ofutino o le toniga ma lamolemole. & Tioata taʻitasi e vavaeeseina e se pepa pepa e puipuia ai le taʻotoga ma alo ese mai.
5. Faʻaaogaina o loʻo faʻaaogaina lautele ile telefoni telefoni feaveaʻi, Work, OPV, PDA, Cormictorsis, Sworloclectics faʻataʻitaʻiga (Electrodes o faʻataʻitaʻiga (Electrovicces faʻataʻitaʻiga, plactrodes).
ISO o se Indium Tin oxide Coareed tioata ma auai i le TCO (Stripparent Faasao oxive) Faaputuputu tioata.E maualalo le pepa i lalo ma maualuga atu. Galue Malosi I lalo ifo o le 300 ℃.E faʻaaogaina tele i telefoni feaveaʻi, Uafu, OPTV, PDA, Coadouctor, E-tusi, Sworlocticts faʻataʻitaʻiga (Electrovings faʻataʻitaʻiga (Electroving faʻataʻitaʻiga (Electrovings faʻataʻitaʻiga (Electrovings faʻataʻitaʻiga (Electrovicces faʻataʻitaʻiga (eletise. Fto o se flursone-dodting tin oxide (fto) clated tioata (sno 2: f).
Ma le lelei-vevela-vevela gaioiga, 600 ℃, o le sili sili ona lelei sui e avea o se mea taua e le mafai ona faʻaoʻoti le faʻaaogaina o sela i le taimi nei.
O se sui sui mo le ISO, e sili atu ona faʻaaogaina i totonu o le suavai tioata faʻaali, pipita, manifinifi ata tifaga o le sela, dorheom bill conkis ma isi fanua. E faʻapea foi, o le FT, o le FTO ipu o se paʻi paʻi o mata o le tekonolosi e iloa ai le tuʻufaʻatasia o tioata ma paʻi.
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