Mutengo Wakanakisisa weChina Electronic Glass Substrate

Tsanangudzo Pfupi

FOB Mutengo:US $0.5 - 9,999 / Piece

Min.Order Quantity:100 Piece/Zvimedu

Supply Ability:10000 Piece / Zvimedu pamwedzi

Port:Shenzhen

Payment Terms:L/C,D/A,D/P,T/T

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Nhengo yega yega kubva kune yedu hombe yekuita mari yevashandi inokoshesa zvinodiwa nevatengi uye kutaurirana kwekambani Mutengo Wakanakisa weChina Electronic Glass Substrate, Hatife takamira kuvandudza hunyanzvi hwedu uye hunhu kuti tibatsire kuramba tichishandisa maitiro ekuvandudza indasitiri ino uye kuzadzisa kuzadzikiswa kwako nemazvo. Kana iwe uchifarira mukati memhinduro dzedu, unofanirwa kubata nesu wakasununguka.
Imwe neimwe nhengo kubva kune yedu yakakura kuita mari vashandi vanokoshesa zvinodiwa nevatengi uye kutaurirana kwekambaniChina Ultra-Tin Electronic Girazi, Fto Conductive Girazi, Nemusimboti wekukunda-kuhwina, isu tinotarisira kukubatsira iwe kuita purofiti yakawanda mumusika. Mukana hausi wekubata, asi kuti ugadzirwe. Chero makambani ekutengesa kana vanogovera kubva kune chero nyika vanogamuchirwa.
OEM 10 makore ruzivo

555- (13)-400 555- (12)-400

Factory Direct Supply AZO/FTO/ITO Conductive Coated Glass yeLab Testing

Electronic Level / High Precision / Super Flatness

Inowanikwa neMulitiple Process

Chii chinonzi ITO Conductive Glass?

1. ITO conductive glass inogadzirwa nekuisa silicon dioxide (SiO2) uye indium tin oxide (inowanzonzi ITO) mafirimu matete pahwaro hwesoda-lime kana borosilicate girazi nekushandisa magnetron kuyerwa nzira.

2. ITO isimbi yesimbi ine yakanaka yakajeka uye conductive zvinhu. Iyo ine maitiro eiyo inorambidzwa bandwidth, yakakwirira mwenje transmittance uye yakaderera resistivity munzvimbo inooneka inooneka. Inoshandiswa zvakanyanya mumadhizaini ekuratidzira, maseru ezuva, uye akakosha anoshanda mahwindo ekuvhara. Zvishandiso zverabhoritari uye zvimwe zvigadzirwa zveoptoelectronic.

ChiiFTO Conductive Girazi?

1. FTO conductive glass is fluorine-doped SnO2 transparent conductive glass (SnO2: F), inonzi FTO.

2. SnO2 yakakura band-gap oxide semiconductor iyo yakajeka kune inooneka chiedza, ine bhendi gap ye 3.7-4.0eV, uye ine nguva dzose tetrahedral yegoridhe tsvuku. Mushure mekuiswa doped nefluorine, iyo SnO2 firimu ine zvakanakira yekufambiswa kwechiedza kuchiedza chinooneka, hombe ultraviolet absorption coefficient, yakaderera resistivity, yakagadzikana makemikari zvinhu, uye yakasimba kuramba asidi uye alkali pakamuri tembiricha.